Determination of SEU parameters of NMOS and CMOS SRAMs

Conference · Sat Nov 30 23:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5826040

Roth, D R ^[1]

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1. Clemson Univ., SC (United States). Dept. of Physics and Astronomy

In this paper procedures for determining the SEU parameters for advanced memory devices are demonstrated for CMOS and resistor-loaded NMOS SRAMs. The dimensions of the sensitive volume are either obtained from charge collection measurements on test structures or estimated from similar measurements on the SRAMs themselves. Values of the critical charge determined from simple proton measurements agree with the values obtained for three SRAMs from extensive heavy-ion data.

• OSTI ID: 5826040
• Report Number(s): CONF-910751--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
CHARGE COLLECTION
CHARGED PARTICLES
CORRELATIONS
ELEMENTARY PARTICLES
FERMIONS
HADRONS
HEAVY IONS
IONS
MEASURING METHODS
MEMORY DEVICES
MOS TRANSISTORS
NUCLEONS
PROTONS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
VARIATIONS