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Depth dependence of alkali etching of poly(tetrafluoroethylene): Effect of x-ray radiation

Journal Article · · Langmuir; (USA)
DOI:https://doi.org/10.1021/la00090a010· OSTI ID:6952058
;  [1]
  1. Sandia National Labs., Albuquerque, NM (USA)

Using Rutherford backscattering spectroscopy (RBS), the authors have shown that defluorination due to alkali etching of poly(tetrafluoroethylene) (PTFE or Teflon) extends to a depth of at least 3,000 {angstrom}. Equivalent alkali etching after irradiation with Mg K{alpha} X-rays gives no indication of defluorination within the depth resolution of RBS (150 {angstrom}); the RBS spectrum is identical with that of a reference PTFE sample. In contrast, X-ray photoelectron spectra (XPS) reveal comparable defluorination for both irradiated and nonirradiated samples. given the sampling depth of XPS and the depth resolution of RBS, this limits the defluorination depth of the irradiated surfaces of PTFE to between 30 and 150 {angstrom}.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
6952058
Journal Information:
Langmuir; (USA), Journal Name: Langmuir; (USA) Vol. 5:6; ISSN 0743-7463; ISSN LANGD
Country of Publication:
United States
Language:
English