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Characterization of the copper-poly(tetrafluoroethylene) interface

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2221016· OSTI ID:5614093
; ;  [1]
  1. Sandia National Lab., Albuquerque, NM (United States)

Using Rutherford backscattering spectroscopy (RBS) and x-ray photoelectron spectroscopy (XPS), the authors have shown that strong adhesion of electrolessly deposited Cu to etched poly(tetrafluoroethylene) (PTFE) results from penetration of all species (tin oxide from the sensitization step, Pd from the nucleation step, and electrolessly deposited Cu) into the porous, carbon-rich, 3,000 A-deep chemically etched layer. Measurements of the deposited Cu films show a yield strength comparable to commercial Cu-clad PTFE. XPS analysis of both failure surfaces show only C(1s) and F(1s) peaks characteristic of virgin PTFE with a small amount of the C(1s) peak characteristic of etched PTFE. Near-cohesive failure occurs at a depth into the etched layer where bulk PTFE characteristics are approached but at depths greater than those shown from RBS depth profiles to be accessible to Cu penetration. Line-of-sight thermal evaporation of Cu yields Cu RBS depth profiles that are identical to those obtained from electrolessly deposited (isotropic) Cu, suggesting that the structure of the PTFE pores into which the Cu mechanically interlocks is very open, with few convolutions.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
5614093
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:11; ISSN JESOAN; ISSN 0013-4651
Country of Publication:
United States
Language:
English