Non-selective tungsten chemical-vapor deposition using Tungsten hexacarbonyl
We have used tungsten hexacarbonyl to deposit thin (<1000 A) non-selective tungsten films on silicon and silicon dioxide at 550/sup 0/C. Thicker (greater than or equal to1 micron) tungsten films were then deposited using film as an adhesion layer. Films grown in this manner have excellent adhesion to SiO/sub 2/, essentially 100% step coverage, and good resistivity (7.5--14 ..mu cap omega..-cm). Samples could be transferred under vacuum from the deposition chamber to a UHV chamber equipped with Auger spectroscopy, thus allowing surface and interface properties of the tungsten films to be studied at the initial stages of growth. No evidence was found for a stoichiometric tungsten oxide or tungsten silicide at the W/SiO/sub 2/ interface.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM 87185
- OSTI ID:
- 6932657
- Report Number(s):
- CONF-8711124-
- Journal Information:
- AIP Conf. Proc.; (United States), Journal Name: AIP Conf. Proc.; (United States) Vol. 167:1; ISSN APCPC
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101 -- Metals & Alloys-- Preparation & Fabrication
360601* -- Other Materials-- Preparation & Manufacture
ADSORPTION
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELEMENTS
EVAPORATION
METALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
REFRACTORY METAL COMPOUNDS
SILICON COMPOUNDS
SILICON OXIDES
SORPTION
SORPTIVE PROPERTIES
STOICHIOMETRY
SURFACE COATING
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN OXIDES
VACUUM EVAPORATION