High-temperature stress measurement on chemical-vapor-deposited tungsten silicide and tungsten films
Stresses in chemical-vapor-deposited tungsten silicide and tungsten films at high temperatures were measured. Tungsten silicide films were formed from WF/sub 6/ and SiH/sub 4/ or Si/sub 2/H/sub 6/. Tungsten films were formed from WF/sub 6/ and H/sub 2/. The stress in tungsten silicide films is tensile and in the order of 10/sup 9/--10/sup 10/ dynes/cm/sup 2/. For a composition ratio of Si/Wless than or equal to2.6, the stress of a film of more than 1000 A has a maximum at about 500 /sup 0/C. On the other hand, for a composition Si/W>2.9, the stress has no maximum. The maximum of the stress is caused by crystallization of the film. The stress has two components. One component is related to the difference of the thermal expansion coefficients between the film and the Si substrate. Another is related to the film crystallization. It was found that the stress concentrates in the portion of the film nearest the substrate. The stress in tungsten films also reaches a maximum at 550 /sup 0/C, similar to the tungsten silicide films. However, the cause of this behavior is not clear.
- Research Organization:
- Process Development Department, Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan
- OSTI ID:
- 6974891
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104* -- Metals & Alloys-- Physical Properties
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTALLIZATION
DEPOSITION
ELEMENTS
FILMS
METALS
PHASE TRANSFORMATIONS
REFRACTORY METAL COMPOUNDS
SILICIDES
SILICON COMPOUNDS
STRESSES
SURFACE COATING
TEMPERATURE EFFECTS
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES