Composition of CVD tungsten silicides

Journal Article · Fri May 01 04:00:00 EDT 1987 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2100662· OSTI ID:6297713

Hara, T; Takahashi, H; Ishizawa, Y

The composition of tungsten silicide (WSi/sub x/) deposited by chemical vapor deposition on silicon and silicon dioxide substrates was studied. The composition x changed from 2.7 to 2.2 with varying WF/sub 6/ flow rate from 6 to 20 cm/sup 3//min in the deposition on silicon. When annealing was performed at 1000C, the dissociation of excess silicon occurred from the nonstoichiometric silicide in the layer on the silicon. As a result, the composition of each layer, which was different when deposited, tended toward the same composition of around 2.1. This result indicated the formation of near-stoichiometric silicide as a result of annealing.

• Research Organization: Electrical Engineering, Hosei Univ., Kajinocho, Koganei, Tokyo 184
• OSTI ID: 6297713
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 135:5; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ANNEALING
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DISSOCIATION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FABRICATION
HEAT TREATMENTS
INTERFACES
LAYERS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PRECIPITATION
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SEPARATION PROCESSES
SILICIDES
SILICON
SILICON COMPOUNDS
SILICON OXIDES
STOICHIOMETRY
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES
VERY HIGH TEMPERATURE