Non-selective tungsten CVD using tungsten hexacarbonyl
We have used tungsten hexacarbonyl to deposit thin (<1000 A) non-selective tungsten films on silicon and silicon dioxide at 550/sup 0/C. Thicker (approx. =1 micron) tungsten films were then deposited using conventional H/sub 2/ reduction of WF/sub 6/ at 470/sup 0/C using the non-selective film as an adhesion layer. Films grown in this manner have excellent adhesion to SiO/sub 2/, essentially 100% step coverage, and good resistivity. Samples could be transferred under vacuum from the deposition chamber to a uhv chamber equipped with Aguer spectroscopy, thus allowing surface and interface properties of the tungsten films to be studied at the initial stages of growth. No evidence was found for a stoichiometric tungsten oxide or tungsten silicide at the W/SiO/sub 2/ interface. 13 refs., 4 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5556715
- Report Number(s):
- SAND-87-1334C; CONF-8711124-1; ON: DE88003392
- Resource Relation:
- Conference: Topical conference on deposition and growth: limits for microelectronics, Anaheim, CA, USA, 2 Nov 1987; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
TUNGSTEN
ADHESION
CHEMICAL VAPOR DEPOSITION
AUGER ELECTRON SPECTROSCOPY
CARBONYLS
COMPARATIVE EVALUATIONS
ELECTRICAL PROPERTIES
FILMS
GRAIN SIZE
INTERFACES
MICROELECTRONIC CIRCUITS
MICROSTRUCTURE
SILICON
SILICON OXIDES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN FLUORIDES
TUNGSTEN OXIDES
TUNGSTEN SILICIDES
CHALCOGENIDES
CHEMICAL COATING
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELECTRONIC CIRCUITS
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
METALS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SIZE
SPECTROSCOPY
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
360101* - Metals & Alloys- Preparation & Fabrication
360601 - Other Materials- Preparation & Manufacture