Non-selective tungsten CVD using tungsten hexacarbonyl
We have used tungsten hexacarbonyl to deposit thin (<1000 A) non-selective tungsten films on silicon and silicon dioxide at 550/sup 0/C. Thicker (approx. =1 micron) tungsten films were then deposited using conventional H/sub 2/ reduction of WF/sub 6/ at 470/sup 0/C using the non-selective film as an adhesion layer. Films grown in this manner have excellent adhesion to SiO/sub 2/, essentially 100% step coverage, and good resistivity. Samples could be transferred under vacuum from the deposition chamber to a uhv chamber equipped with Aguer spectroscopy, thus allowing surface and interface properties of the tungsten films to be studied at the initial stages of growth. No evidence was found for a stoichiometric tungsten oxide or tungsten silicide at the W/SiO/sub 2/ interface. 13 refs., 4 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5556715
- Report Number(s):
- SAND-87-1334C; CONF-8711124-1; ON: DE88003392
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
360601 -- Other Materials-- Preparation & Manufacture
ADHESION
AUGER ELECTRON SPECTROSCOPY
CARBONYLS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELECTRONIC CIRCUITS
ELEMENTS
FILMS
FLUORIDES
FLUORINE COMPOUNDS
GRAIN SIZE
HALIDES
HALOGEN COMPOUNDS
INTERFACES
METALS
MICROELECTRONIC CIRCUITS
MICROSCOPY
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SIZE
SPECTROSCOPY
SUBSTRATES
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES
TUNGSTEN OXIDES
TUNGSTEN SILICIDES