Properties of chemical vapor deposited tungsten silicide films using reaction of WF/sub 6/ and Si/sub 2/H/sub 6/

Journal Article · Fri May 01 04:00:00 EDT 1987 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2100645· OSTI ID:6116223

Shioya, Y; Ikegami, K; Kobayashi, I; Maeda, M

Tungsten silicide films were formed by the chemical vapor deposition method using the reaction WF/sub 6/ and Si/sub 2/H/sub 6/. The deposition rate, resistivity, composition, stress, crystal structure, and content of impurities were studied and compared with tungsten silicide films deposited by reaction of WF/sub 6/ and SiH/sub 4/. The tungsten silicide films made using Si/sub 2/H/sub 6/ have a higher deposition rate and higher Si concentration than those made by using SiH/sub 4/ at the same substrate temperature. For these reasons, the tungsten silicide films made by using Si/sub 2/H/sub 6/ were found to have a resistivity that is a little higher and, after annealing, a stress that is smaller than that made by SiH/sub 4/.

• Research Organization: Fujitsu Ltd., Process Development Dept., 1015 Kamikodanaka, Nakahara-ku, Kawasaki 211
• OSTI ID: 6116223
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 135:5; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201 -- Chemical & Physicochemical Properties
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTION YIELD
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FLUORIDES
FLUORINE
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENS
HYDRIDES
HYDROGEN COMPOUNDS
IMPURITIES
KINETICS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHYSICAL PROPERTIES
REACTION KINETICS
REFRACTORY METAL COMPOUNDS
SILANES
SILICIDES
SILICON COMPOUNDS
STRESSES
SUBSTRATES
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES
TUNGSTEN SILICIDES
YIELDS