Influence of deposition variables on LPCVD tungsten films deposited by the WF/sub 6//Si reduction
In an effort to isolate and study the Si reduction of WF/sub 6/ by the reduction reaction 2 WF/sub 6/ + 3 Si ..-->.. 2 W + 3 SiF/sub 4/, a systematic study of the influence of temperature, substrate doping, deposition time and variable flow rates of tungsten hexafluoride (WF/sub 6/) was conducted. The effect of varying these parameters on film thickness, layer resistivity, encroachment and adhesion was investigated. A set of operating conditions has been defined that yield stable, adherent, self-limiting films of -100A thickness that are free from encroachment. Film quality was found to be relatively insensitive to moderate variations in process parameters, a favorable indication in terms of process integration and manufacturability.
- Research Organization:
- Kirk-Mayer, Inc., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6468870
- Report Number(s):
- SAND-85-7254C; CONF-8510238-1; ON: DE86003727
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELEMENTS
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
METALS
REDUCTION
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICON
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES