Fabrication of dry-etched cavity GaAs/AlGaAs multiquantum-well lasers with high spatial uniformity

Journal Article · Thu Sep 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341682· OSTI ID:6925779

Yamada, T; Yuasa, T; Asakawa, K; Shimazu, M; Ishii, M; Uchida, M

In order to obtain dry-etched lasers with high spatial uniformity, the relation between the etching profile and the laser structure is investigated in detail for two types of GaAs/AlGaAs multiquantum-well lasers, with and without selective Zn diffusion, with reactive-ion-beam-etched facets. It is found that a laser structure with an abrupt step on the surface locally roughens the facets during etching through the generation of etching residues on the etched bottom. Such an abrupt step on a wafer can be typically introduced by the conventional selective Zn-diffusion process including surface chemical treatment. The etched lasers fabricated with the selective Zn-diffusion process show a wide distribution in the threshold current. In contrast, the lasers without the selective diffusion process realize a narrow distribution in the theshold current.

• Research Organization: Optoelectronics Joint Research Laboratory, 1333 Kamikodanaka, Nakahara-ku, Kawasaki 221, Japan
• OSTI ID: 6925779
• Journal Information: J. Appl. Phys.; (United States), Vol. 64:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
LASER CAVITIES
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
ATOM TRANSPORT
DIFFUSION
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
ZINC
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
LASERS
METALS
NEUTRAL-PARTICLE TRANSPORT
NUMERICAL DATA
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)