Characterization of reactively sputtered WN/sub x/ film as a gate metal for self-alignment GaAs metal--semiconductor field effect transistors
Properties of reactively sputtered WN/sub x/ films on a GaAs substrate have been investigated by electrical and physical analyses. WN/sub x/ films were deposited from a pure W target by using three types of sputtering systems: (1) Magnetron sputtering system equipped with RF and dc mode; (2) S-gun sputtering system; (3) RF diode sputtering system. The composition of WN/sub x/ films was easily and reproducibly controlled by changing the N/sub 2/ content in Ar--N/sub 2/ mixed ambient gas. The WN/sub x/--GaAs system was both electrically and metallurgically stable even after high-temperature annealing of up to 800/sup 0/C. The Schottky barrier height to n-type GaAs was more than 0.8 V, which is the highest value obtained so far among any other refractory metals. Self-aligned GaAs MESFET's were successfully fabricated using a WN/sub x/ gate. The transconductance was typically 150 mS/mm for 1.5 ..mu..m gate length.
- Research Organization:
- VLSI Research Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan
- OSTI ID:
- 6909985
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 4:6; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
MAGNETRONS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPUTTERING
SYNTHESIS
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN NITRIDES