Properties of WN sub x films and WN sub x /GaAs Schottky diodes prepared by ion beam assisted deposition technique

Journal Article · Sun Jan 14 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345759· OSTI ID:6986419

Lee, J S; Park, C S; Yang, J W; Kang, J Y; Ma, D S ^[1]

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1. Compound Semiconductor Department, Electronics and Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Daejeon, (Korea)

Low energy ion beam assisted deposition (IBAD) of refractory tungsten nitride films onto GaAs is attempted for the first time. This ion beam technique provides lower process pressure, and less ion damage to substrates and films than conventional reactive sputter deposition. Schottky diode characteristics of W/ and WN{sub {ital x}}/GaAs and their thermal stability were investigated by capping the refractory films with SiO{sub 2} films and subsequent annealing at 700--900 {degree}C for 30 min. While both tungsten and tungsten nitride contacts were stable up to 850 {degree}C, the tungsten nitride contact showed better thermal stability and higher Schottky barrier height. The Schottky barrier heights of W/ and WN{sub 0.27}/GaAs diodes annealed at 850 {degree}C were 0.71 and 0.84 eV, respectively. These preliminary results are comparable to those of the best results reported with the conventional sputtering methods.

• OSTI ID: 6986419
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:2; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COHERENT SCATTERING
DEPOSITION
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ENERGY BEAM DEPOSITION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAMS
IONIZING RADIATIONS
NITRIDES
NITROGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
REFRACTORY METAL COMPOUNDS
SCATTERING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROSCOPY
SURFACE COATING
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN NITRIDES
X RADIATION
X-RAY DIFFRACTION