Investigation of the interface integrity of the thermally stable WN/GaAs Schottky contracts
WN{sub x}/GaAs Schottky contacts formed by reactive sputtering were found to be thermally stable up to an annealing temperature of {approximately}900{degrees}C. The interface morphology and structure of this contact under high temperature annealing conditions ( > 700{degrees}C) have been investigated by transmission electron microscopy (TEM) and x-ray diffractometry techniques. For the as-deposited samples, the thin film had an amorphous structure. After annealing at high temperatures, the amorphous phase transformed to {alpha}-W and W{sub 2}N phases. However, the contact interface remained thermally stable up to 850{degrees}C. Cross-sectional TEM micrographs revealed that annealing at temperatures above 850{degrees}C resulted in the formation of pockets'' beneath the interface. This phenomenon has been correlated with the electrical properties of the contacts, e.g., an enhancement of the barrier height of the contact. Comparisons between the interface morphology of this system and other refractory metal nitride contacts (e.g., TiN/GaAs) are also presented.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- DOE; DOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5874794
- Report Number(s):
- LBL-27942; CONF-890426--35; ON: DE92008302; CNN: N00014-86-K-0668
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERFACES
MICROSCOPY
MORPHOLOGY
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SCATTERING
TRANSITION ELEMENT COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN COMPOUNDS
TUNGSTEN NITRIDES
X-RAY DIFFRACTION