Thermal stability of Mo-Al Schottky metallizations on n-GaAs
- National Tsing Hua Univ., Taiwan (China); and others
The contact stability and electrical characteristics of sputtered Mo-Al alloy metallizations (Mo{sub 74}Al{sub 26}, Mo{sub 27}Al{sub 73}, Mo{sub 12}Al{sub 88}) on n-GaAs have been investigated. The contacts were annealed by rapid thermal processing in the temperature range of 500-1000 {degrees}C for 20 s. X-ray diffraction, Auger depth profiling, scanning electron microscopy, and transmission electron microscopy (TEM) were used to study the structural characteristics. The Schottky diodes were assessed using the current-voltage measurements. The Mo{sub 74}Al{sub 26}/GaAs and Mo{sub 27}Al{sub 73}/GaAs contacts were stable up to 900{degrees}C anneal, while interfacial reactions in 800 {degrees}C annealed Mo{sub 12}Al{sub 88}/GaAs contact were observed. VAriations of the film surface morphologies and the degradation of the diodes after annealing can be well correlated to the interfacial stabilities. For all thermally stable Mo-Al/GaAs diodes, the Schottky barrier heights increased with annealing temperature. The Al{sub x}Ga{sub 1-x}As at the interface, which contributes to the enhancement of the barrier height, has been clearly verified by the dark field cross-sectional TEM viewed along the {l_angle}100{r_angle} of GaAs. 24 refs., 11 figs.
- OSTI ID:
- 147009
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 3 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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