High-temperature stable W/GaAs interface and application to metal--semiconductor field-effect transistors and digital circuits
The thermal stability of the physical, chemical, and electrical properties of W thin films sputter deposited on GaAs were investigated. A variety of characterization methods, including thin film stress analysis, Auger analysis, Rutherford backscattering spectrometry (RBS) analysis, and Schottky barrier measurements showed that the W/GaAs interface remains stable after high-temperature furnace annealing at 900 /sup 0/C for 15 min or rapid-lamp annealing at 1000 /sup 0/C for 11 s. Some refractory metal compounds were also investigated, including, WSi, WN/sub x/, and TaSi/sub x/. Pure W films produced the best Schottky diode characteristics. The average Schottky barrier height was 0.70 +- 0.009 V across a 2-in wafer after furnace annealing at 800 /sup 0/C/15 min. Pure W self-aligned gate (SAG) metal-semiconductor field-effect transistors (MESFET) and digital circuits were also fabricated. Transconductances as high as 300 mS/mm (L/sub g/ = 1.0 ..mu..m) were measured for enhancement mode SAG MESFET's. Circuits were fabricated with SAG MESFET enhancement-resistor mode logic using pure W gates, including ring oscillators, with gate delay as low as 25 ps and divide-by-eight circuits that functioned at a frequency >1 GHz.
- Research Organization:
- Hughes Research Laboratories, Malibu, California 90265
- OSTI ID:
- 5979135
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 5:6; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360103 -- Metals & Alloys-- Mechanical Properties
360104* -- Metals & Alloys-- Physical Properties
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
METALS
MICROELECTRONIC CIRCUITS
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICIDES
SILICON COMPOUNDS
TANTALUM COMPOUNDS
TANTALUM NITRIDES
TANTALUM SILICIDES
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES