High-temperature stable W/GaAs interface and application to metal--semiconductor field-effect transistors and digital circuits
The thermal stability of the physical, chemical, and electrical properties of W thin films sputter deposited on GaAs were investigated. A variety of characterization methods, including thin film stress analysis, Auger analysis, Rutherford backscattering spectrometry (RBS) analysis, and Schottky barrier measurements showed that the W/GaAs interface remains stable after high-temperature furnace annealing at 900 /sup 0/C for 15 min or rapid-lamp annealing at 1000 /sup 0/C for 11 s. Some refractory metal compounds were also investigated, including, WSi, WN/sub x/, and TaSi/sub x/. Pure W films produced the best Schottky diode characteristics. The average Schottky barrier height was 0.70 +- 0.009 V across a 2-in wafer after furnace annealing at 800 /sup 0/C/15 min. Pure W self-aligned gate (SAG) metal-semiconductor field-effect transistors (MESFET) and digital circuits were also fabricated. Transconductances as high as 300 mS/mm (L/sub g/ = 1.0 ..mu..m) were measured for enhancement mode SAG MESFET's. Circuits were fabricated with SAG MESFET enhancement-resistor mode logic using pure W gates, including ring oscillators, with gate delay as low as 25 ps and divide-by-eight circuits that functioned at a frequency >1 GHz.
- Research Organization:
- Hughes Research Laboratories, Malibu, California 90265
- OSTI ID:
- 5979135
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Vol. 5:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
FIELD EFFECT TRANSISTORS
ELECTRICAL PROPERTIES
FABRICATION
MICROELECTRONIC CIRCUITS
GALLIUM ARSENIDES
SCHOTTKY BARRIER DIODES
TUNGSTEN
PHYSICAL PROPERTIES
EXPERIMENTAL DATA
TANTALUM NITRIDES
TANTALUM SILICIDES
TUNGSTEN SILICIDES
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRONIC CIRCUITS
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
METALS
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
PNICTIDES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICIDES
SILICON COMPOUNDS
TANTALUM COMPOUNDS
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
360104* - Metals & Alloys- Physical Properties
360103 - Metals & Alloys- Mechanical Properties