Thermal stability of TaSi/sub x/-GaAs Schottky barriers in rapid thermal processing. [Self-aligned gate fabrication of GaAs MESFETs]

Conference · Thu Jan 01 04:00:00 EST 1987

OSTI ID:6600378

Haynes, T E; Han, C C; Lau, S S; Picraux, S T; Chu, W K

Co-sputtered TaSi/sub x/ films on GaAs have been examined as potential refractory Schottky barrier contacts suitable for self-aligned gate fabrication of GaAs MESFETs. Thermal stability of electrical and physical characteristics has been studied following furnace annealing and rapid thermal processing of contacts with compositions near Ta/sub 5/Si/sub 3/ (x = 0.6). Assessment of integrity of the annealed contacts has been made based on measurement of electrical characteristics, interface interdiffusion, and evaporation of GaAs through the contact. Superior stability as a function of anneal temperature up to 900/sup 0/C was achieved for TaSi/sub 0.6/ contacts using rapid thermal processing (RTP) techniques rather than furnace annealing. Current-voltage characteristics were found to be insensitive to RTP temperature between 700 and 900/sup 0/C.

• Research Organization: North Carolina Univ., Chapel Hill (USA); California Univ., San Diego (USA); Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6600378
• Report Number(s): SAND-87-0982C; CONF-870438-4; ON: DE87008508
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICIDES
SILICON COMPOUNDS
STABILITY
TANTALUM COMPOUNDS
TANTALUM SILICIDES
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS