Stability of TaSi/sub x/-GaAs Schottky barriers in rapid thermal processing

Journal Article · Mon Nov 28 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100506· OSTI ID:7014805

Haynes, T E; Chu, W K; Han, C C; Lau, S S; Picraux, S T

n-type GaAs samples coated with TaSi/sub 2/ and Ta/sub 5/ Si/sub 3/ Schottky barrier contacts were heated in a flashlamp rapid thermal processing (RTP) system to temperatures between 600 and 950 /sup 0/C. We have measured the evaporation of gallium and arsenic through the contact overlayers which results from the decomposition of the GaAs substrate. These decomposition measurements have been correlated with the Schottky barrier behavior as determined from forward-bias current-voltage characteristics and selected capacitance-voltage measurements. The high-temperature stability against decomposition and electrical degradation was superior for Ta/sub 5/ Si/sub 3/ contacts relative to TaSi/sub 2/ contacts. We observed for both contact compositions that the onset temperature for decomposition of GaAs was slightly lower than the maximum temperature for electrical stability. Thus, we found that in some cases substantial decomposition occurred with no effect on the current-voltage characteristics. For example, Ta/sub 5/ Si/sub 3/ contacts maintained a stable barrier height of 0.78 eV through 10 s RTP treatments up to 900 /sup 0/C, in spite of decomposition of at least ten equivalent monolayers of GaAs.

• Research Organization: University of North Carolina, Chapel Hill, North Carolina 27599-3255
• OSTI ID: 7014805
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:22; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
DATA
DECOMPOSITION
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
INTERFACES
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REFRACTORY METAL COMPOUNDS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICIDES
SILICON COMPOUNDS
STABILITY
TANTALUM COMPOUNDS
TANTALUM OXIDES
TANTALUM SILICIDES
TRANSITION ELEMENT COMPOUNDS
VERY HIGH TEMPERATURE