Buried-ridge striped planar GaAlAs/GaAs lasers with a wide range of effective index steps

Journal Article · Mon Feb 12 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102732· OSTI ID:6908757

Lee, S J; Ramaswamy, R V; Zory, P S ^[1]; Figueroa, L ^[2]

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1. University of Florida, Electrical Engineering Department, Gainesville, Florida 32611 (US)
2. Boeing High Technology Electronics Center, Seattle, Washington 98124 (USA)

A novel self-aligned buried-ridge striped planar (BRSP) GaAlAs/GaAs diode laser structure is presented. The structure was grown by two-step liquid phase epitaxy using preferential growth and melt etch. A Ga{sub 1{minus}{ital y}}Al{sub {ital y}} As layer with a wide range of Al concentration ({ital y}{gt}0.05) is selectively grown outside the ridge and can be an effective melt-etching mask. As a result, the BRSP structure can incorporate virtually all effective index steps, i.e., the positive, negative, and complex index steps. The threshold current of the BRSP structure is between 70 and 100 mA. The BRSP structure may prove to be of importance in the realization of linear array lasers.

• OSTI ID: 6908757
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:7; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EPITAXY
ETCHING
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LIQUID PHASE EPITAXY
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE FINISHING
THRESHOLD CURRENT