A buried-cap planar stripe (BCP) GaAlAs laser with ZnSe current-confinement region by MBE

Journal Article · Wed Jun 01 04:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071971· OSTI ID:5482315

Niina, T; Hamada, H; Yamaguchi, T; Yodoshi, K

A GaA1As visible laser with a novel structure, called a buried-cap planar (BCP) stripe laser, has been developed. It has an epitaxial ZnSe semiinsulating layer grown by molecular beam epitaxy (MBE) on a cladding layer, leaving a narrow stripe for the current confinement. In this laser a reflective index waveguide is constructed by using a channeled substrate, and the current flow is confined by growing the semiinsulating ZnSe single crystal on the cladding layer after mesa etching the cap layer. There are many advantages in this structure: the diffusion process is not necessary, the current confinement is complete, and the thermal strains and misfit dislocations can be avoided. These advantages assure a highly reliable device performance, and a high-yield fabrication process.

• Research Organization: Research Center, Sanyo Elec. Company Ltd., Osaka
• OSTI ID: 5482315
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-19:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTALS
DESIGN
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE PROPERTIES
WAVEGUIDES
ZINC COMPOUNDS
ZINC SELENIDES