Lateral-current confinement in a GaAs planar stripe-geometry and channeled substrate buried DH laser using reverse-biased p-n junctions

Journal Article · Mon May 01 00:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325206· OSTI ID:6847103

Tsang, W T; Logan, R A

Processes have been developed for producing stripe-geometry planar DH lasers and channeled substrate buried DH lasers where lateral-current confinement is obtained with reverse-biased n-p junctions on both sides of the active layer. These current-confinement schemes lead to current flow only through the two superimposed top and bottom stripe windows in otherwise completely reverse-biased n-p junctions. The structures are composed only of as-grown liquid-phase-epitaxy multilayers. These lasers have low threshold current densities, clean stable optical-mode patterns, and excellent linearity in the light-current curves. In addition, the channeled substrate buried DH lasers have optical and carrier confinement in both transverse directions, while also achieving efficient lateral-injection-current confinement. Results from a theoretical analysis, which describes the dependence of the threshold current density J/sub sth/ of DH lasers upon stripe width S, are compared to the measured dependence and excellent agreement is obtained.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6847103
• Journal Information: J. Appl. Phys.; (United States), Vol. 49:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
EFFICIENCY
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
P-N JUNCTIONS
PERFORMANCE
THRESHOLD ENERGY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ENERGY
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)