Lateral current confinement by reverse-biased junctions in GaAs-Al/sub x/Ga/sub 1-x/As DH lasers
Two methods are described for fabrication of a DH stripe-geometry laser where lateral current confinement is obtained with reverse-biased junctions on both sides of the active layer. Threshold current densities, comparable in values to optimum values achieved in other stripe geometry lasers, are obtained as a function of top channel widths for lasers with single and double current confinement. The lasers exhibit clean stable mode patterns with excellent linearity of the optical output power as a function of injection current. Lasers with channel widths approximately-less-than14 ..mu..m operate in the lowest-order transverse mode in the junction plane for currents up to approx.two times the threshold (an output power of 16 mW per mirror).
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 7224512
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 30:10
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
THRESHOLD ENERGY
ALUMINIUM ARSENIDES
EMISSION SPECTRA
EPITAXY
EXCITATION
FABRICATION
GALLIUM ARSENIDES
JUNCTION DIODES
LAYERS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTRA
420300* - Engineering- Lasers- (-1989)