Effects of device scaling and geometry on MOS radiation hardness assurance

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.273493· OSTI ID:6908025

Shaneyfelt, M R; Fleetwood, D M; Winokur, P S; Schwank, J R; Meisenheimer, T L ^[1]

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1. Sandia National Labs., Albuquerque, NM (United States)

In this work the authors investigate the effects of transistor scaling and geometry on radiation hardness. The total dose response is shown to depend strongly on transistor channel length. Specifically, transistors with shorter gate lengths tend to show more negative threshold-voltage shifts during irradiation than transistors with longer gate lengths. Similarly, transistors with longer gate lengths tend to show more positive threshold-voltage shifts during post-irradiation annealing than transistors with shorter gate lengths. These differences in radiation response, caused by differences in transistor size and geometry, will be important to factor into test-structure-to-IC correlations necessary to support cost-effective Qualified Manufacturers List (QML) hardness assurance. Transistors with minimum gate length (more negative [Delta]V[sub th]) will have a larger effect on standby power supply current for an IC at high dose rates, such as in a weapon environment, where worst-case response is associated with negative threshold-voltage shifts during irradiation. On the other hand, transistors with maximum gate length (more positive [Delta]V[sub th]) will have a larger effect on the timing parameters of an IC at low dose rates, such as in a space environment, where worst-case response is represented by positive threshold-voltage shifts after postirradiation anneal. The channel size and geometry effects they observe cannot be predicted from simple scaling models, but occur because of real differences in oxide-, interface-, and border-trap charge densities among devices of different sizes.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6908025
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DATA
DOSES
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
HARDENING
INFORMATION
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATION HARDENING
SCALING LAWS
SEMICONDUCTOR DEVICES
TRANSISTORS