Dose-rate effects in the permanent threshold voltage shifts of MOS transistors

Conference · Mon Dec 01 04:00:00 EST 1975 · IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2214-2218

OSTI ID:4083671

Maier, R J; Tallon, R W

Data have been collected that show the permanent threshold voltage shift occurring in MOS transistors exposed to the same total dose of gamma radiation can be greater in a high dose-rate environment than in a low dose-rate environment. This dose-rate effect is ascribed to a ''Photovoltaic'' bias generation in the substrate of a device which results in an effective gate bias change (positive for P-channel and negative for N-channel transistors). The bias change ranges from 0 to +-1 volt during the radiation burst. Thus, in a high dose-rate ionizing environment, the permanent gate threshold voltage shift of a MOS device, which is known to be a function of the gate bias during irradiation, will exhibit an indirect dose-rate dependence which is caused by an internal change in instantaneous gate bias. (auth)

• Research Organization: Air Force Weapons Lab., Kirtland AFB, NM
• NSA Number: NSA-33-020337
• OSTI ID: 4083671
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci., v. NS-22, no. 6, pp. 2214-2218
• Country of Publication: United States
• Language: English

Related Subjects

*MOS TRANSISTORS-- PHYSICAL RADIATION EFFECTS
440200* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
DOSE RATES
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIVALENT CIRCUITS
GAMMA RADIATION
MATHEMATICAL MODELS
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
SENSITIVITY
TRANSIENTS