Radiation response of fully-depleted MOS transistors fabricated in SIMOX

Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6559216

Jenkins, W C ^[1]; Liu, S T ^[2]

---

1. Naval Research Lab., Washington, DC (United States)
2. Honeywell Solid State Electronics Center, Plymouth, MN (United States)

The total dose radiation response of radiation-resistant fully-depleted submicron n-MOS and p-MOS transistors fabricated in SIMOX is presented. The total ionizing dose radiation induced threshold voltage shifts under three different irradiation bias conditions, including the worst case (pass-gate) bias for n-MOS transistors are discussed. Total dose hard fully-depleted p-MOS transistors are experimentally demonstrated. The larger threshold voltage shifts of fully-depleted n-MOS transistors as compared to partially-depleted n-MOS transistors in an ionizing radiation environment are explained by a model coupling the radiation induced buried oxide charge to the top transistor.

• OSTI ID: 6559216
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DATA
DEPLETION LAYER
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
INFORMATION
ION IMPLANTATION
LAYERS
MATHEMATICAL MODELS
MOS TRANSISTORS
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS