Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556848· OSTI ID:443034

Brady, F T ^[1]; Hughes, H L; Mrstik, B ^[2]; McMarr, P J ^[3]

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1. Lockheed Martin Federal Systems, Manassas, VA (United States)
2. Naval Research Lab., Washington, DC (United States)
3. SFA, Landover, MD (United States)

A total dose hardening treatment is applied to SIMOX buried oxides. Total ionizing dose radiation testing is performed on fully-depleted transistors fabricated on both hardened and non-hardened substrates. At 200 krads x-ray dose, the front gate shift is reduced from {minus}0.7 to {minus}0.2 V for FETs built on the hardened wafers.

• OSTI ID: 443034
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 43; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
IONIZING RADIATIONS
RADIATION DOSES
RADIATION HARDENING
TRANSISTORS