Fully-depleted submicron SOI for radiation hardened applications
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6488615
- Loral Federal Systems, Manassas, VA (United States)
Using fully-depleted technology, the Loral 256K SOI SRAM has demonstrated under worst case SEU and prompt dose testing an LET threshold of at least 80 MeV*cm[sup 2]/mg, and a prompt dose rate upset level of greater then 4E10 rad(Si)/s, respectively, without design hardening. Total dose testing on transistors fabricated on enhanced bond and etchback SOI substrates indicates over 100 krad(Si) capability. Together, these results represent the first description of a fully depleted SOI technology for all radiation-hardened applications except extreme total dose.
- OSTI ID:
- 6488615
- Report Number(s):
- CONF-940726--
- Conference Information:
- Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:6Pt1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DEPLETION LAYER
ERRORS
HARDENING
LAYERS
MEMORY DEVICES
PERFORMANCE
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
TECHNOLOGY ASSESSMENT
TESTING
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DEPLETION LAYER
ERRORS
HARDENING
LAYERS
MEMORY DEVICES
PERFORMANCE
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
TECHNOLOGY ASSESSMENT
TESTING