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BUSFET - A Novel Radiation-Hardened SOI Transistor

Conference ·
OSTI ID:3357
 [1]; ; ;
  1. Sandia National Laboratories
+ Show Author Affiliations

A partially-depleted SOI transistor structure has been designed that does not require the use of specially-processed hardened buried oxides for total-dose hardness and maintains the intrinsic SEU and dose rate hardness advantages of SOI technology.

Research Organization:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
3357
Report Number(s):
SAND99-0323C
Country of Publication:
United States
Language:
English

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Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DOSE RATES
HARDNESS
PHYSICAL RADIATION EFFECTS
RADIATION HARDENING
TRANSISTORS