SPICE analysis of the SEU sensitivity of a fully depleted SOI CMOS SRAM cell

Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6558978

Alles, M L ^[1]

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1. Ibis Technology Corporation, Danvers, MA (United States)

Fully depleted silicon-on-insulator (SOI) technologies are of interest for commercial applications as well as for use in harsh (radiation-intensive) environments. In both types of application, effects of charged particles (single-event effects) are of concern. Here, SPICE analysis of SEU sensitivity of a 6-T SRAM cell using commercially-representative fully depleted SOI CMOS technology parameters indicates that reduction of the minority carrier lifetime (parasitic bipolar gain) and use of thinner silicon can significantly reduce SEU sensitivity.

• OSTI ID: 6558978
• Report Number(s): CONF-940726--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
CHARGE CARRIERS
CHARGED PARTICLES
COMPUTER CODES
COMPUTERIZED SIMULATION
ELECTRICAL PROPERTIES
ERRORS
HEAVY IONS
IONS
MEMORY DEVICES
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
S CODES
SIMULATION