SEU in SOI SRAMs -- A static model

Conference · Wed Jun 01 00:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6598173

Musseau, O; Leray, J L; Ferlet-Cavrois, V; Coiec, Y M ^[1]; Giffard, B ^[2]

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1. CEA, Bruyeres le Chatel (France)
2. CEA, Grenoble (France)

The sensitivity to heavy ions of CMOS/SOI devices is mostly determined by the parasitic bipolar transistor that amplifies the deposited charge. A simple static model is proposed, which gives a relation between the LET threshold and the bipolar amplification factor [beta]*. An analytical expression for [beta]* versus transistor dimensions and ion LET is established, based on electrical measurements and numerical simulations on elementary transistors. Predictions from this model are in good agreement with experimental data obtained on SRAMs.

• OSTI ID: 6598173
• Report Number(s): CONF-930953--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:3Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
ENERGY TRANSFER
HEAVY IONS
IONS
LET
MATHEMATICAL MODELS
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SCALING LAWS
SEMICONDUCTOR DEVICES
SENSITIVITY
TRANSISTORS