Transient radiation effects in SOI static RAM cells
Recent transient radiation experiments have shown a substrate bias dependence on the logic upset levels of a silicon-on-insulator (SOI) technology. From this data, it was concluded that secondary photocurrents generated by the parasitic bipolar junction transistors (BJTs) were responsible for the observed difference in the bias dependent transient radiation induced upset thresholds. In this report we present our results obtained from computer simulations of the transient radiation response of the SOI technology. These results support a possible explanation for the bias dependent logic upset levels experimentally observed. Parasitic BJT gain calculations, gain modulation and substrate bias effects on transient upset thresholds in static random access memory (SRAM) cells are discussed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM 87185 (US)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7149580
- Report Number(s):
- CONF-8707112-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLIFICATION
DATA
ELECTRONIC CIRCUITS
ELEMENTS
EXPERIMENTAL DATA
GAIN
INFORMATION
JUNCTION TRANSISTORS
LOGIC CIRCUITS
MEMORY DEVICES
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
SEMIMETALS
SILICON
TECHNOLOGY ASSESSMENT
TRANSISTORS