Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX{trademark} substrates

Journal Article · Sun Nov 30 23:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.659024· OSTI ID:644202

Liu, S T ^[1]; Allen, L P; Anc, M J ^[2]; Jenkins, W C; Hughes, H L; Twigg, M E ^[3]; Lawrence, R K ^[4]

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1. Honeywell, Inc., Plymouth, MN (United States)
2. IBIS Technology Corp., Danvers, MA (United States)
3. Naval Research Lab., Washington, DC (United States)
4. ARACOR, Sunnyvale, CA (United States)

In a search of high quality Silicon-On-Insulator (SOI) wafers for future radiation hard electronics applications, the authors have evaluated a new low dose SIMOX called ADVANTOX{trademark}. This paper addresses the unwanted radiation induced back channel conduction of partially depleted (PD) CMOS transistors fabricated on these materials. The emphasis is placed on PD NMOS transistors because the total dose ionizing irradiation usually produces largest threshold voltage shifts in SOI back n-channels. The worst-case radiation test results of Pd NMOS transistors of ADVANTOX are then fitted by a simple equation with two parameters.

• OSTI ID: 644202
• Report Number(s): CONF-970711--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
IONIZING RADIATIONS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
TESTING