Effect of x-ray radiation on MOSFET's (SIMOX) LF excess noise

Journal Article · Mon Jun 01 00:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.277519· OSTI ID:7108288

Berland, V; Touboul, A ^[1]; E Dupont-Nivet, J L ^[2]

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1. Univ. Bordeaux 1, IXL-URA 846//CNRS 351 cours de la Liberation 33405 Talence Cedex (FR)
2. Leray CEA-DAM, B.P. 12, 92000 Bruyere-le-Chatel (FR)

This paper is related to the behavior of hardened n-MOS and p-MOS transistors (SOI-SIMOX technology). These elementary components have been irradiated by X-ray radiation after an electrical characterization. In addition to the electrical parameters as the threshold voltage V{sub t}, the transconductance g{sub m} and the leakage drain current I{sub df0}, it appears interesting to observe the channel noise level shift before and after irradiation at different doses. The particular interest of this analysis is found in the behavior of SOI-SIMOX technology transistors.

• OSTI ID: 7108288
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 39:3; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CURRENTS
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY
ENERGY-LEVEL DENSITY
FIELD EFFECT TRANSISTORS
FLUCTUATIONS
HARDENING
INTERFACES
IONIZING RADIATIONS
LEAKAGE CURRENT
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SIGNAL-TO-NOISE RATIO
SILICON
THRESHOLD ENERGY
TRANSISTORS
VARIATIONS
X RADIATION