Converting a bulk radiation-hardened BiCMOS technology into a dielectrically-isolated process
- Analog Devices Semiconductor, Wilmington, MA (United States)
- Naval Surface Warfare Center, Crane, IN (United States)
- RLP Research, Inc., Albuquerque, NM (United States)
RBCMOS (Radiation-hardened Bipolar CMOS) is a 10-volt, junction-isolated, radiation-hardened BiCMOS process developed at Analog Devices. It is a radiation-hardened version of Analog Devices' commercial Advanced Bipolar CMOS (ABCMOS) process. Both of these processes are designed for advanced mixed-signal circuits such as high-performance D/A and A/D converters. To improve the dose-rate performance of the process, the DI version is being developed. The isolation scheme employed is similar to that used on state-of-the-art commercial complementary-bipolar processes. The starting material is a bonded wafer SOI substrate. Full oxide isolation is achieved with deep trenches that are filled with a combination of oxide and polysilicon. Excellent transistor yield has been demonstrated. The DI process exhibits improved performance in high dose-rate environments, including higher upset thresholds, and improved recovery times. The addition of the oxide isolation did not introduce any radiation sensitivites.
- OSTI ID:
- 6907995
- Report Number(s):
- CONF-930704--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGED PARTICLES
ELECTRONIC CIRCUITS
FABRICATION
HARDENING
ION IMPLANTATION
IONS
NITROGEN IONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING