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Radiation effects on power integrated circuits

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6177053
; ; ;

A study was initiated to investigate the effects of gamma (total ionizing dose), prompt gamma (gamma dot), and neutron radiation on commercially available power integrated circuits (PIC's). A Dielectric Isolated (DI) Bipolar-CMOS-DMOS (BCDMOS) technology developed at AT and T Bell Laboratories was selected for this characterization. Total ionizing dose testing resulted in device failure at 30 krads (Si). Gamma dot testing (30 ns pulsewidth) resulted in device failure due to transient upset of the CMOS logic at 1.0 E+09 rads(Si)/s. Neutron testing resulted in severe degradation in performance, but devices remained functional after receiving a fluence of 2.0 E+14 n/cm/sup 2/. Also, an attempt was made to harden the BCDMOS technology to gamma radiation. Devices from eight processing splits were characterized to determine if specific process changes would improve their performance.

Research Organization:
AT and T Bell Labs., Reading, PA (US); Naval Weapons Support Center (US)
OSTI ID:
6177053
Report Number(s):
CONF-880730-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001 -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
654003 -- Radiation & Shielding Physics-- Neutron Interactions with Matter
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
GAMMA RADIATION
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
NEUTRAL-PARTICLE TRANSPORT
NEUTRON TRANSPORT
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
PROCESSING
RADIATION EFFECTS
RADIATION TRANSPORT
RADIATIONS
SEMICONDUCTOR DEVICES
TESTING
TRANSIENTS
TRANSISTORS