Radiation hardening of a high voltage IC technology (BCDMOS)

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.101234· OSTI ID:5884530

Desko, Jr, J C; Darwish, M N; Dolly, M C; Goodwin, C A ^[1]; Dawes, Jr, W R ^[2]; Titus, J L ^[3]

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1. AT and T Bell Lab., Reading, PA (US)
2. Sandia National Labs., Albuquerque, NM (USA)
3. Naval Weapons Support Center, Crane, IN (USA)

A program was undertaken to radiation harden an existing power integrated circuit technology (BCDMOS) to total dose, gamma dot, SEU, and neutrons. Efforts have centered around hardening and optimizing our CMOS, DMOS, and NPN devices. Initial results indicate a substantial improvement in hardness over our existing commercial technology.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5884530
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BARYONS
DOSE RATES
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
FERMIONS
HADRONS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
NEUTRONS
NUCLEONS
OPTIMIZATION
PHYSICAL RADIATION EFFECTS
POWER
RADIATION EFFECTS
RADIATION HARDENING