Radiation evaluation study of LSI RAM technologies. Final report
Technical Report
·
OSTI ID:6603553
Five commercial LSI static RAM technologies having a 1 kilobit capacity were radiation characterized. Arrays from the TTL, Schottky TTL, NMOS, CMOS, and CMOS/SOS families were evaluated. Radiation failure thresholds for gamma dose-rate logic upset, total gamma dose survivability, and neutron fluence survivability were determined. Included is a brief analysis of the radiation failure mechanism for each of the logic families tested.
- Research Organization:
- Air Force Weapons Lab., Kirtland AFB, NM (USA)
- OSTI ID:
- 6603553
- Report Number(s):
- AD-A-084168
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation characterization of sequential logic circuits. Final report
Comparison study of the five transistor-transistor-logic (TTL) families and emitter coupled logic (ECL). Final report
Improvement on radiation-hardened MOS device technology
Technical Report
·
Sat Dec 31 23:00:00 EST 1977
·
OSTI ID:6690477
Comparison study of the five transistor-transistor-logic (TTL) families and emitter coupled logic (ECL). Final report
Technical Report
·
Mon May 01 00:00:00 EDT 1978
·
OSTI ID:6139440
Improvement on radiation-hardened MOS device technology
Technical Report
·
Mon Dec 31 23:00:00 EST 1984
·
OSTI ID:6532883
Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DAMAGE
HARDENING
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DAMAGE
HARDENING
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES