Radiation characterization of sequential logic circuits. Final report

Technical Report · Sun Jan 01 04:00:00 EST 1978

OSTI ID:6690477

Knoll, M G; Bobo, K

This report describes the test techniques for radiation characterizing medium and large-scale integration (MSI/LSI) sequential logic circuits where few internal nodes are available for testing. Four sequential logic devices, two transistor-transistor-logic (TTL) technology devices and two complementary-metal-oxide-silicon (CMOS) technology devices were characterized. The devices were characterized for gamma dose-rate logic upset, total gamma dose survivability, and neutron fluence survivability. The data has been analyzed to determine the applicability of the testing techniques and procedures.

• Research Organization: Air Force Weapons Lab., Kirtland AFB, NM (USA)
• OSTI ID: 6690477
• Report Number(s): AD-A-050476; AFWL-TR-77-167
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
FERMIONS
GAMMA RADIATION
HADRONS
INTEGRATED CIRCUITS
IONIZING RADIATIONS
LOGIC CIRCUITS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TESTING
TRANSISTORS