The design of radiation-hardened ICs for space
The approaches to designing radiation-hardened integrated circuits for space applications are reviewed in this paper. Several technologies are covered, including bulk and epi CMOS, CMOS/SOL-SOS, CML,ECL, analog bipolar (JI, single-poly DI, and SOI) and GaAsE/D Heterojunction MESFET. Sections of the paper cover the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D converters, and the computer simulation of radiation effects on microelectronic ICs.
- Research Organization:
- Dept. of Electrical Engineering, Vanderbilt Univ., Nashville, TN (US); Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 6220231
- Journal Information:
- Proc. IEEE; (United States), Journal Name: Proc. IEEE; (United States) Vol. 76:11; ISSN IEEPA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605 -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
AMPLIFIERS
ANALOG-TO-DIGITAL CONVERTERS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COMPUTERIZED SIMULATION
DESIGN
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
HETEROJUNCTIONS
JUNCTIONS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SILICON COMPOUNDS
SILICON OXIDES
SIMULATION
SPACE VEHICLE COMPONENTS
TRANSISTORS