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The design of radiation-hardened ICs for space

Journal Article · · Proc. IEEE; (United States)
OSTI ID:6220231

The approaches to designing radiation-hardened integrated circuits for space applications are reviewed in this paper. Several technologies are covered, including bulk and epi CMOS, CMOS/SOL-SOS, CML,ECL, analog bipolar (JI, single-poly DI, and SOI) and GaAsE/D Heterojunction MESFET. Sections of the paper cover the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D converters, and the computer simulation of radiation effects on microelectronic ICs.

Research Organization:
Dept. of Electrical Engineering, Vanderbilt Univ., Nashville, TN (US); Sandia National Labs., Albuquerque, NM (US)
OSTI ID:
6220231
Journal Information:
Proc. IEEE; (United States), Journal Name: Proc. IEEE; (United States) Vol. 76:11; ISSN IEEPA
Country of Publication:
United States
Language:
English

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