Body the placement in CMOS/SOI digital circuits for transient radiation environments
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5832490
- Vanderbilt Univ., Nashville, TN (United States)
- Harris Semiconductor, Palm Bay, FL (US)
This paper presents criteria for the use of body ties to reduce or eliminate parasitic bipolar effects important in the transient radiation response of SOI/CMOS devices. A theoretically derived body tie spacing rule is verified using both TRIGSPICE and PISCESII with photocurrent injection capabilities. The tie spacing rule, which is independent of feature size within bounds, provides a simple guideline for design/layout of CMOS/SOI digital circuits for harsh transient radiation environments.
- OSTI ID:
- 5832490
- Report Number(s):
- CONF-910751--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DESIGN
DIGITAL SYSTEMS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRICAL TRANSIENTS
MOS TRANSISTORS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
RADIATION EFFECTS
REGULATIONS
SEMICONDUCTOR DEVICES
TRANSIENTS
TRANSISTORS
VOLTAGE DROP
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DESIGN
DIGITAL SYSTEMS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRICAL TRANSIENTS
MOS TRANSISTORS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
RADIATION EFFECTS
REGULATIONS
SEMICONDUCTOR DEVICES
TRANSIENTS
TRANSISTORS
VOLTAGE DROP