A Brief Discussion of Radiation Hardening of CMOS Microelectronics
- Sandia National Laboratories
Commercial microchips work well in their intended environments. However, generic microchips will not fimction correctly if exposed to sufficient amounts of ionizing radiation, the kind that satellites encounter in outer space. Modern CMOS circuits must overcome three specific concerns from ionizing radiation: total-dose, single-event, and dose-rate effects. Minority-carrier devices such as bipolar transistors, optical receivers, and solar cells must also deal with recombination-generation centers caused by displacement damage, which are not major concerns for majority-carrier CMOS devices. There are ways to make the chips themselves more resistant to radiation. This extra protection, called radiation hardening, has been called both a science and an art. Radiation hardening requires both changing the designs of the chips and altering the ways that the chips are manufactured.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 2453
- Report Number(s):
- SAND98-2827J; ON: DE00002453
- Journal Information:
- EE Times, Journal Name: EE Times
- Country of Publication:
- United States
- Language:
- English
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