Alpha, silicon, and iron ion induced current transients in low capacitance silicon and GaAs diodes

Conference · Thu Dec 31 23:00:00 EST 1987

DOI:https://doi.org/10.1109/23.25501· OSTI ID:6907158

Wagner, R S; Bordes, N; Bradley, J M; Maggiore, C J; Knudson, A; Campbell, A

High-speed (<40 ps) current transient and charge collection measurements were make using a wide-band 70-GHz, 6-ps risetime sampling oscilloscope, on GaAs and silicon diodes irradiated by 18 MeV Si, 12 MeV B, 12 and 100 MeV Fe ions, and 3 and 5 MeV alpha particles. Results show that the response of a device to a particle strike can be very fast but strongly depends on the LET (Linear Energy Transfer) of the particle. The rise time dependence with different parameters such as the doping density, bias, at different energies with different particles, is also persented. The data are then compared to the predictions of existing models. 7 refs., 12 figs., 2 tabs.

• Research Organization: Los Alamos National Lab., NM (USA)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 6907158
• Report Number(s): LA-UR-88-2073; CONF-880730-7; ON: DE88014419
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA PARTICLES
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
BORON IONS
CHARGED PARTICLES
CURRENTS
ELECTRIC CHARGES
ELECTRIC CURRENTS
ELECTRONIC EQUIPMENT
ENERGY RANGE
ENERGY TRANSFER
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAMS
IONS
IRON IONS
LET
MEV RANGE
MEV RANGE 01-10
MEV RANGE 10-100
OSCILLOGRAPHS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON DIODES
SILICON IONS
TRANSIENTS