Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode
- Department of Electricity and Energy, Vocational High School of Technical Sciences, Bingol University, 12000 Bingol (Turkey)
- Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum (Turkey)
- Department of Physics, Faculty of Sciences, Yildiz Technical University, 34220 Istanbul (Turkey)
- Department of Engineering Physics, Faculty of Sciences, Istanbul Medeniyet University, 34700 Istanbul (Turkey)
In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current–voltage, capacitance–voltage, and conductance–voltage characteristics of Ti/n–GaAs diode have been investigated in the temperature range of 80–320 K. The ideality factor and barrier height values have been calculated from the forward current–voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance–voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = −0.65 meV K{sup −1}). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.
- OSTI ID:
- 22402823
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 23 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Schottky barrier heights for GaAs diodes fabricated at low temperatures
The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs
Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
ELECTRONEGATIVITY
GALLIUM ARSENIDES
MAGNETRONS
POTENTIALS
SCHOTTKY BARRIER DIODES
SPUTTERING
TEMPERATURE COEFFICIENT
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K