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Bias-dependent photoresponse of p/sup +/in GaAs/AlAs/GaAs diodes

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.97648· OSTI ID:7039608
; ; ; ; ;

We report photocollection efficiency measurements of p/sup +/in GaAs/AlAs/GaAs diodes fabricated on films grown by molecular beam epitaxy. Both the zero-bias and bias-dependent photocollection characteristics can be explained by assuming that the band discontinuity between AlAs and GaAs is mostly accommodated in the valence band.

Research Organization:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
OSTI ID:
7039608
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:3; ISSN APPLA
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ELECTRONIC STRUCTURE
EPITAXY
FABRICATION
FILMS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
MOLECULAR BEAM EPITAXY
PHOTODIODES
PHOTOELECTRIC EFFECT
PHOTOELECTROMAGNETIC EFFECTS
PNICTIDES
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SPECTRAL RESPONSE
THIN FILMS
VALENCE