GaAs/In/sub x/Al/sub 1-x/As (0 less than or equal to x less than or equal to 0. 006) indirect bandgap superlattices

Conference · Mon Sep 01 00:00:00 EDT 1986

OSTI ID:5136142

Drummond, T J; Jones, E D; Hjalmarson, H P; Doyle, B L

To explain transport data in unipolar superlattice diode structures it is necessary to assume that, for a sufficiently short period, AlAs/GaAs superlattices have an indirect bandgap. By using appropriately designed superlattices grown by molecular beam epitaxy, the supperlattice GAMMA band is moved sufficiently far above the X bands that luminescence from these bands is clearly observed for the first time.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5136142
• Report Number(s): SAND-86-2062C; CONF-860915-3; ON: DE87000975
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUPERLATTICES