Alpha, boron, silicon and iron ion induced current transients in low-capacitance silicon and GaAs diodes

Conference · Wed Nov 30 23:00:00 EST 1988 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6085802

Wagner, R S; Bordes, N; Bradley, J M; Maggiore, C J; Knudson, A R; Campbell, A B

High-speed current transient measurements were made over a large range of linear energy transfer (LET), using a wide band 70 GHz (6 ps rise time) sampling oscilloscope on high-resistivity GaAs diodes and 1, 3, and 10 ..cap omega...cm silicon diodes. 3- and 5-MeV alpha particles, 12-MeV boron, 18-MeV silicon and 12- and 100-MeV iron ions incident on these devices produced rise times in the range from about 38 ps to 100 ps depending on LET and device resistivity. Results are compared to the equivalent circuit and phenomenological models.

• Research Organization: Mechanical and Electrical Engineering Div., Los Alamos National Lab., Los Alamos, NM (US); Condensed Matter and Radiation Sciences Div., Naval Research Lab., Washington, DC (US)
• OSTI ID: 6085802
• Report Number(s): CONF-880730-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALPHA PARTICLES
ARSENIC COMPOUNDS
ARSENIDES
BORON IONS
CHANNELING
CHARGED PARTICLES
ELEMENTS
ENERGY TRANSFER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION CHANNELING
IONS
IRON
LET
METALS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON DIODES
TRANSIENTS
TRANSITION ELEMENTS