Triggering GaAs lock-on switches with laser diode arrays

Conference · Sun Dec 31 23:00:00 EST 1989

OSTI ID:6528226

Loubriel, G M; Buttram, M T; Helgeson, W D; McLaughlin, D L; O'Malley, M W; Zutavern, F J ^[1]; Rosen, A; Stabile, P J ^[2]

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1. Sandia National Labs., Albuquerque, NM (USA)
2. David Sarnoff Research Center, Princeton, NJ (USA)

Laser diode arrays have been used to trigger GaAs Photoconducting Semiconductor Switches (PCSS) charged to voltages of up to 60 kV and conducting currents of 580 A. The driving forces behind the use of laser diode arrays are compactness, elimination of complicated optics, and the ability to run at high repetition rates. Laser diode arrays are compactness, elimination of complicated optics, and the ability to run at high repetition rates. Laser diode arrays can trigger GaAs at high fields as the result of a new switching mode (lock-on) with very high carrier number gain. We have achieved switching of up to 10 MW in a 60 {Omega} system, with a pulse rise time of 500 ps. At 1.2 MW we have achieved repetition rates of 1 kHz with switch rise time of 500 ps for 10{sup 5} shots. The laser diode array used for these experiments delivers a 166 W pulse. In a single shot mode we have switched 4 kA with a flash lamp pumped laser and 600 A with the 166 W array. 7 refs., 5 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6528226
• Report Number(s): SAND-90-0953C; CONF-9011125--2; ON: DE91002419
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LIGHT EMITTING DIODES
PNICTIDES
PULSE CIRCUITS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR SWITCHES
SOLID STATE LASERS
SWITCHES
TRIGGER CIRCUITS
WAVE FORMS