Semiconductor laser with blocking layer

Patent · Mon Dec 29 23:00:00 EST 1986

OSTI ID:6902833

Morrison, C B; Burghard, A

This patent describes, in a semiconductor laser diode operable at high power and brightness levels, a structure comprising: a semiconductor substrate having at least two parallel channels formed in one of its surfaces; a first inactive cladding semiconductor layer of the same polarity type material as the substrate, overlying the substrate; a second inactive cladding semiconductor layer of the opposite polarity type material; an active semiconductor layer disposed between the first and second inactive layers; a blocking layer of opposite polarity type material to the substrate, disposed between the substrate and the first inactive layer, but only in regions outside of the substrate channels, and not in regions overlying or between the channels; and means for applying a bias voltage between the inactive layers, to produce optical gain in the device, wherein the means for applying a bias voltage includes a metallization layer extending over the substrate channels; whereby the blocking layer and the multiple channel structure together provide a current focusing mechanism that concentrates current flow through and between the channels, and thereby improves performance characteristics.

• Assignee: TRW, Inc., Redondo Beach, CA
• Patent Number(s): US 4633477
• OSTI ID: 6902833
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
BRIGHTNESS
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
FOCUSING
GAIN
LASERS
LAYERS
MATERIALS
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES