Inverted channel substrate planar semiconductor laser
An inverted channel substrate planar semiconductor laser is described, comprising: a planar substrate of semiconductor material of a selected conductivity type; a planar first cladding layer of semiconductor material of the same conductivity type formed over the substrate; a planar active layer of undoped semiconductor material formed over the first cladding layer; a second cladding layer of semiconductor material of the opposite conductivity type formed over the active layer and having a mesa formed on it; a semiconductor blocking layer formed over the second cladding layer and having a conductivity type the same as the substrate; and a conductive contact region extending through the blocking layer to contact the mesa formed on the second cladding layer; whereby the blocking layer laterally surrounds the mesa of the second cladding layer and functions both to confine the current to the region of the mesa and to laterally confine lasing to the same region.
- Assignee:
- TRW Inc., Redondo Beach, CA
- Patent Number(s):
- US 4821278
- OSTI ID:
- 5885618
- Country of Publication:
- United States
- Language:
- English
Similar Records
Double heterostructure laser
Semiconductor laser with blocking layer