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U.S. Department of Energy
Office of Scientific and Technical Information

Double heterostructure laser

Patent ·
OSTI ID:6063461
This patent describes a semiconductor laser which consists of: 1.) a body of semiconductor material having a pair of spaced, parallel and facets which are reflective of light at the laser wavelength with at least one of the facets being partially transparent and including a substrate with a pair of opposed major surfaces with substantially parallel channels with mesas separating the channels. The mesas have top surfaces below the first major surface of the substrate, and extend between the facets forming a channelled region in the substrate surface; 2.) a first cladding layer overlying the surfaces of the substrate, the channels and the mesas and having a layer surface over the channelled region which is not coplanar with the layer surface over the remainder of the substrate. The layer surface has a central portion over the channelled region which is substantially planar; 3.) a cavity region overlying the first cladding layer; 4.) a second cladding layer overlying the active layer; 5.) a first electrical contact overlying the second cladding layer over the central portion of the channelled region; and 6.) a substrate electrical contact overlying the second major surface of the substrate.
Assignee:
RCA Corp., Princeton, NJ
Patent Number(s):
US 4569054
OSTI ID:
6063461
Country of Publication:
United States
Language:
English