Low leakage current gainasp/inp buried heterostructure laser and method of fabrication
This patent describes a buried heterostructure semiconductor laser, comprising: a p-type semiconductor substrate, a semiconductor p-type buffer layer, active region and n-type clad layer formed in succession over the substrate and collectively forming a mesa shape, first and second blocking layers of oppositely doped semiconductor material of n and p type conductivity, respectively disposed in succession over the buffer layer lateral to the active region and forming a blocking p-n junction to confine majority carrier flow to the active region, a layer of n-type doped semiconductor material having a lower bandgap than the first blocking layer disposed between the buffer layer and the first blocking layer, an electrically conductive n-type doped semiconductor contact layer overlying and in direct contact with the second blocking layer and the clad layer, an insulating layer overlying the contact layer above the second blocking layer and generally lateral to the clad layer, and an electrical contact overlying and insulating the contact layers.
- Assignee:
- Hughes Aircraft Co., Los Angeles, CA
- Patent Number(s):
- US 4779282
- OSTI ID:
- 6523296
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
DOPED MATERIALS
ELECTRICAL INSULATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GRADED BAND GAPS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASER MATERIALS
LASERS
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS